An Improved Model for Quasi-Ballistic Transport in MOSFETs

We have already presented a compact model for FETs operating in the quasi-ballistic regime [1]. However, this model suffers from two important problems: 1) the profile for charge density along the channel is not correctly accounted for and 2) current is not conserved throughout the channel. In this brief, we propose improvement, which does away with these inaccuracies.