A novel design of a microstrip microwave broadband power amplifier for DCS, PCS and UMTS bands

A RF-microwave broadband power amplifier using the Si-Bipolar transistor is presented in this work. The power amplifier operates in several frequency ranges 1.70–2.20GHz. Which covers the following bands: DCS (Digital Cellular System) (1710MHz–1880MHz) in Europe, PCS (Personal communication Services/System) (1850MHz–1990MHZ) in the United States, UMTS (Universal Mobile Telecommunication System) (1920MHz–2170MHz). The broadband matching networks of this amplifier consist of microstrip transmission lines. This BPA based on the analysis of scattering parameters, also with using analytical and computer-aided optimization techniques. A typical broadband amplifier has been designed with a nominal power gain of 11.5dB with a maximum deviation of 1dB, covering the 1.70–2.20GHz band. The high gain, good performances for input and output matching networks impedance and stability are achieved.