STI HDP process effect on yield of embedded memory processes

One of the key challenges in embedded memory solutions is yield degradation due to additional thermal budget in the process. In this work, we report STI HDP-CVD (Shallow Trench Isolation High-Density Plasma Chemical Vapor Deposition) process as a key contribution factor to yield degradation in embedded memory devices by causing higher degree of silicon dislocations. With optimized plasma sputter/deposition conditions, silicon dislocations are reduced and significantly improved yield.