Study on High-side LDMOS energy capability Improvement

Improvement of Laterally Diffused Metal Oxide Semiconductor (LDMOS) energy capability, Unclamped inductive switching (UIS) is used to characterize ruggedness in terms of the maximum avalanche energy that device can handle prior to destructive breakdown. Maximum amount of UIS energy (E
_AS
) sustained by device before failure is evaluated and have linear relationship with number of device finger and device-width. As we know that in multi-finger LDMOS the equivalent parasitic resistance gets lowered and MOS cells hence avoiding possibility of current failure. With lowered parasitic resistance Maximum energy of avalanche in single pulse (E
_AS
) energy increases linearly with number of fingers.[l]