Influence of Neutron Irradiation on Electron Traps Induced by NGB Stress in AlInN/GaN HEMTs

This paper shows the impact of low fluence neutron irradiation on AlInN/GaN HEMTs before and after a negative gate bias stress done at a gate-to-source voltage (VGS) of -20 V and at a drain-to-source voltage (VDS) of 0 V during 216 h. We have shown that the neutron irradiation induces a decrease in the drain current of 6% and an increase in access resistance of 8% for the unstressed component in opposite to the stressed component. In fact, a rise in drain current of 9% and no evolution of the access resistance have been observed for a stressed AlInN/GaN HEMT. This phenomenon is related to the formation of complex cluster between the electron traps induced by the aging test and those involved by the neutron irradiation.