Medium voltage power module based on SiC JFETs

This paper presents a medium voltage power module based on the series-connection of low voltage SiC normally-on JFETs using an innovative approach. The module is constructed with reliable-proven and commercially available SiC and Si parts, ensuring the high reliability on the component level. The module has an excellent built-in anti-parallel diode with a low knee voltage of 0.7V and a reverse-recovery characteristic similar to that of SiC schottky diode. The module has excellent static and dynamic performance compared to Si IGBTs and even SiC MOSFETs. A 4.5kV-40A prototype module has been demonstrated and the experimental results are reported.