Demonstration of a 50 kW and 100 kHz SiC high power density converter with gate assisted circuit

The high power density converter is required due to the strict demands of volume and weight in more electric aircraft, which makes SiC extremely attractive for this application. In this work, a prototype of 50 kW SiC high power density converter with the topology of two-level three-phase voltage source inverter is demonstrated. A gate assisted circuit is further introduced to reduce the switching loss and mitigate EMI. A mathematical model with consideration of various parasitic parameters is developed. This converter is operated at a switching frequency up to 100 kHz and a narrow dead band of 250 ns. And the efficiency is measured to be 97.91% at 100 kHz and 98.68% at 60 kHz.