Next generation ferrite material for SiC & GaN applications

This paper presents a new ferrite material for future power electronics at very high frequency applications. The rapid progress in Gallium Nitride (GaN) and Silicon Carbide (SiC) power semiconductors will lead to a further miniaturization of power electronic assemblies and subsystems. Inductive components have a significant impact here. The drastically increased frequency requires improved ferrite materials with lowest losses and transformer or choke designs with unique construction technologies. The paper describes the final development status of this improved and thus novel ferrite material for high frequency applications.