Method of extraction of virtual X-parameters for a 500W internally matched device

This paper discusses an approach taken to extract a virtual X-parameter (vX-parameter) model for a 500W L-Band internally matched device (IMD). X-parameters are essentially an open form of nonlinear data format that can be directly extracted from an NVNA and can be used in a circuit simulator as non-linear models. However, for very high power devices, the NVNA and its required peripheral components may limit the power/frequency range where X-parameters can be obtained through direct measurements. By generating these virtual X-parameters from a compact model based schematic, product level models can be realized with significant benefits over a compact model based solution. Included in these are faster convergence, intellectual property (IP) protection, and simplified distribution. They can also be generated much faster than the measurement based X-parameters.