A Nonlinear Switched State-Space Model for Capacitive RF DACs

This paper presents a nonlinear state-space model (SSM) for a low power 28-nm complementary metal–oxide–semiconductor switched-capacitor digital-to-analog converter. The proposed model utilizes current–voltage (I-V) input and output relationships for passive devices, which are described by a set of first-order differential equations. The proposed model significantly increases accuracy when compared with the state-of-the-art models. The SSM simulation results have been verified using SpectreRF transistor-level simulations and validated by on-chip measurements.