X-band power amplifier for next generation networks based on mesfet

Advanced wireless standards of communication like 3GPP and LTE are becoming more and more efficient and with this evolution of communication systems mobile equipment is also become smaller and smaller. Power amplifier designing has become a very crucial task in this era where efficiency and size are the main concern of any designer. In this paper we have design and analyzed X-band Class E Metal-semiconductor field effect transistor (MESFET) based Power Amplifier. This device targets the devices which use OFDM technique to improve their spectral efficiency for the next generation communication systems. Microstrip lines are used to achieve small size for our design instead of lumped components. Load Pull measurements are used to get MESFET input and output impedances optimum values. For linear and non linear operation small signal mathematical model of the design is used. To reduce thermal losses FR4 substrate is used to increase PA efficiency. Our designs shows small values of input and output return loss of about -22.3dB and -23.716 dB achieving a high gain of about 25.6 dB respectively, with PAE of about 30 % having stability factor greater than 1 and 21.894dBm of output power