Next generation planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with low specific on-resistance and high switching speed

Due to their fast switching speed, knee-free forward characteristics, and a robust, low reverse recovery body diode, SiC MOSFETs are ideal candidates to replace silicon IGBTs in many high-power medium-voltage applications. 1700 V SiC MOSFETs have already been released to production at Wolfspeed based on its 2
^nd
Gen technology. In this paper, we present our latest results in high voltage 4H-SiC MOSFET development. A low specific on-resistance of 4.7 mΩ·cm
²
has been achieved on 1700 V, 20 mΩ 4H-SiC DMOSFETs at 25°C based on a 3
^rd
generation planar MOSFET platform, which is less than half of the resistance of the previous generation devices. A detailed analysis has been carried out with respect to the static and dynamic characteristics, third quadrant conduction, and body diode reverse recovery charge, etc.