0.97 mΩcm2/820 V 4H-SiC super junction V-groove trench MOSFET

We have fabricated Super Junction (SJ) V-groove trench MOSFETs (VMOSFETs), demonstrated a low specific on-resistance (R
_on
A) of 0.97 mΩcm
²
and a blocking voltage (V
_B
) of 820 V. In the first trial, SJ structure in 4H-SiC have proved to be a good combination with MOS interface on (0-33-8) faces which keep high channel mobility in high doping concentration. We designed a protection structure called “upper p-pillar region” and demonstrated that V
_B
lowering appeared according to its width.