Low resistance Ti-Si-C ohmic contacts for 4H-SiC power devices using laser annealing

Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. Non-equilibrium laser silicidations for low-resistance ohmic contact to 4H-SiC C-face with Titanium was demonstrated. Ti is one of carbon-interstitial type metals. In a conventional nickel silicide (NiSi) electrode on SiC, a carbon agglomeration at the silicide/SiC interface occurs, and contact resistance becomes larger. For suppressing the carbon agglomeration, in this research, nanoseconds non-equilibrium laser annealing was used, and also Ti was introduced to form both silicide and carbide. Ti(75, 100 nm)/SiC and Ni(75, 100 nm)/SiC contacts were formed on C-face side of 4H-SiC substrates. Electrical contact properties were investigated after 40 nanoseconds pulse laser annealing in Ar ambient and rapid thermal annealing. As the result, In the case of laser annealing, the lowest specific contact resistance of 2.4×10
⁻⁴
Ωcm
²
was obtained in Ti(75 nm)/SiC sample in the laser power of 2.5 J/cm
²
.