Enhanced-oxidation and interface modification on 4H-SiC(0001) substrate using Alkaline earth metal

Enhanced-oxidation of 4H-SiC and interface modification with BaO
₂
was investigated. The enhanced oxidation of 4H-SiC was drastically dependent on pre-deposited BaO
₂
thickness. At the oxidation time of 300 min, oxide thicknesses for BaO
₂
of 2.8 nm and 7.8 nm were 91.8 nm and 26.2 nm, respectively. The physical state of Ba in the oxide was investigated by XPS and 2D-GIXD. At thick BaO
₂
with a thickness of over 6.4 nm, bridged oxygen and non-bridged oxygen were observed in O1s state. This results shows barium silicate was formed in SiO
₂
at BaO
₂
thickness of over 6.4 nm.