Characterization of B-implanted 3C-SiC for intermediate band solar cells

Sublimation-grown 3C-SiC crystals were implanted with B ions at elevated temperature (400 °C) using multiple energies (100 to 575 keV) with a total dose of 1.3×10
¹⁷
atoms/cm
²
in order to form intermediate band (IB) in 3C-SiC. The samples were then annealed at 1400 oC for 60 min. An anomalous area in the center was observed in the PL emission pattern. The SIMS analysis indicated that the B concentration was the same both within and outside the anomalous area. The buried boron box-like concentration profile can reach ~3×10
²¹
cm
^-3
in the plateau region. In the anomalous area a broad emission band (possible IB) emerges at around ~1.7-1.8 eV, which may be associated with B-precipitates having a sufficiently high density.