4H-SiC defects evolution by thermal processes

Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. 4H-SiC defects evolution after thermal processes has been evaluated. Different annealing temperatures have been used to decrease the defect density of epitaxial layer (as stacking faults) and recover the damage occurred after ion implantation. The propagation of defects has been detected by Photoluminescence tool and monitored during the thermal processes. The results show that implants do not affect the surface roughness and how a preliminary annealing process, before ion implantation step, can be useful in order to reduce the SFs density. It shown the effect of tuned thermal process. A kind of defect, generated by implant and subsequent annealing, can be removed by an appropriate thermal budget, while others can increase. A fine tuning of thermal process parameters, temperature and timing, is useful to recover the crystallographic quality of the epilayer and increase the yield of the power device.