Functional oxide as an extreme high-k dielectric towards 4H-SiC MOSFET incorporation

Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. MOS Capacitors are demonstrated on 4H-SiC using an octahedral ABO
3
ferroic thin-film as a dielectric prepared on several buffer layers. Five samples were prepared: ABO
3
on SiC, ABO
3
on SiC with a SiO
2
buffer (10 nm and 40 nm) and ABO
3
on SiC with an Al
2
O
3
buffer (10nm and 40 nm). Depending on the buffer material the oxide forms in either the pyrochlore or perovskite phase. A better lattice match with the Al
2
O
3
buffer yields a perovskite phase with internal switchable dipoles. Hysteresis polarization-voltage loops show an oxide capacitance of ∼ 0.2 μF/cm
²
in the accumulation region indicating a dielectric constant of ∼120.