Analysis of trench-filling epitaxial growth of 4H-SiC based on continuous fluid approximation including Gibbs-Thomson effect

Trench-filling epitaxial growth of 4H-SiC was analyzed based on a simulation model for continuous fluid approximation (as opposed to molecular beam approximation) including the Gibbs-Thomson effect. With the use of the radii of curvature at the top and bottom of the trenches, the proposed model well reproduced the measured dependence of the growth rate on the trench pitch (L) in the case of narrow (L ≤ 6.0 μm) trenches.