Investigation of intrinsic hydrogenated amorphous silicon (a-Si:H) thin films on textured silicon substrate with high quality passivation

In this study, the intrinsic hydrogenated amorphous silicon (a-Si:H) thin films deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) was investigated for the application of the heterojunction silicon solar cell on the textured silicon substrate. During the process, we used the optical emission spectrometer (OES) and quadrupole mass spectrometry (QMS) to analyze the concentrations of free radicals in plasma. The results showed that the better surface recombination velocity (SRV) and passivation quality of a-Si:H thin films on the textured silicon substrate were obtained when the electrode distance at PECVD was 35mm. Furthermore, while the electrode distance was 35mm, the lowest electron temperature and the same spectrum ratio trend in OES (Si*/SiH*) and QMS (SiH
₂
/SiH
₃
) respectively were received.