DDR process and materials for NTD photo resist toward 1Xnm patterning and beyond

We developed the novel process and material which can prevent the pattern collapse issue perfectly. The process was Dry Development Rinse (DDR) process, and the material used in this process was DDR material. DDR materials were containing siloxane polymer which could be replaced the space area of the photo resist pattern. And finally, the reversed pattern would be created by dry etching process without any pattern collapse issue. This novel process was useful not only in positive tone development (PTD) process but also in negative tone development (NTD) process. We newly developed DDR material for NTD process. Novel DDR materials were consist of special polymer and it used organic solvent system. Novel DDR materials showed no mixing property with NTD photo resist and it has enough etch selectivity against NTD photo resist. Tmage reverse was demonstrated by combination of NTD and DDR process with EUV scanner. The resolution limit was significantly improved and reversed pattern at hp 14nm was obtained without any pattern collapse issue, which couldn't be created in just only normal NTD process.