Research of the temperature dependence of parameters of the Schottky transistors based on heterostructures

Definition the temperature dependence of electronic components parameters needs for their using in different devices. In this paper we research the temperature dependence of the parameters of test Schottky field-effect transistor based on gallium nitride (GaN) with nanostructure heterojunction. Our measuring platform is based on a two-channel measuring unit and Agilent Technologies E5273A probe-based devices WILD M3Z microscope with a heated table and a temperature controller. We describe the structure of the measured MESFET, layout and installation of measuring current-voltage characteristics of measurement methods. The temperature dependence of the electrical parameters of test Schottky field-effect transistor are presented in table and graphic modes.