Study of the photodetector cells of the visible region color separation vertically integrated p-n-junctions

Study of the photoelectrical processes in the photosensitive structures based on multichannel bulk integrated p-n junctions presented in this work. In this work were studying the distribution of the electrical potential and the tension of the electrical field and the absorption of the optical radiation in the space charge region (SCR) n-p-n-p-n-p structure also were made in this work. It were studying the processes of the charge accumulation and spectral characteristics of the photosensitivity's in the bulk integrated n- and p-type photosensitive structures and were received constructive parameters of the semiconductor layers and permitted values of the directed voltages and the values of the noise characteristics and schema-technical peculiarities of the photosensitive cell were under consideration.