Resistive switching behavior of graphene oxide films in symmetric metal-insulator-metal structures

In this work, the complete technological process for the fabrication of Ti/graphene oxide (GO)/Ti structures is discussed. A microelectronics-compatible deposition technique for GO films is developed, which enables fully covered samples. Control over GO thickness is obtained by a multiple-step spin coating process. GO films have been interfaced for preliminary electrical testing. First insights into the resistive switching properties of Ti/GO/Ti structures and limitations are also presented. Further investigation is needed to determine the potential of GO in the field of flexible non-volatile memories, where optimization of GO films is required.