Investigation of Analog/RF performance of High-k spacer Junctionless Accumulation-Mode Cylindrical Gate All Around (JLAM-CGAA) MOSFET

This paper investigates the high-k spacer Junctionless Accumulation Mode (JLAM) Cylindrical Gate All Around (CGAA) MOSFET for improved electrical behavior and Analog/(RF) performance at 20 nm gate length. In the proposed device, the drive current (I
ON
) enhances due to Source/Channel barrier reduction and leakage current (I
OFF
) is reduced because of an effective increase in the physical channel length, due to fringing field effect caused by spacers. The impact of spacers on Analog/RF matrices such as I
ON
/I
OFF
ratio, transconductance (g
m
), Tansconductance Generation Factor (g
m
/I
DS
) TGF, intrinsic gain (g
m
/g
d
) and Subthreshold Slope (SS) is investigated in detail. The improvement in I
ON
/I
OFF
and reduced SS make it relevant for low power digital application.