Investigating the performance of Short Gate Insulator Less Dielectrically Modulated Tunnel Field Effect Transistor based bio-sensors

In this work, a Short Gate Insulator Less Dielectrically Modulated Tunneling Field Effect Transistor (SGIL-DMTFET) structure is explored in details for bio-sensing applications by using extensive device-level simulation. A comprehensive physical understanding is developed on the gate-engineering technique of DMTFET for bio-molecule conjugation. Such understanding is then successfully extended to analyze the working principle of SGIL architecture and its inherently superior current sensitivity over the conventional DMTFET. A comparative performance study has been performed on the basis of biasing conditions and the relevant biasing range of operations is indicated for both the DMTFETs. Further, the comparative sensing performance of DMTFETs is associated with their relative nature of threshold voltage shift (for conjugation) and sub-threshold swing. Finally, the cavity length and channel thickness are identified as the fundamental device parameters for optimizing sensitivity for both the biosensors.