Progress in device from Molecular Layering to atomic layer deposition worldwide technology

ML-ALD can provide highly pure materials with structural control at atomic scale level. During ten years it evolves as pure chemical process for adsorbent and catalyst practical goal and with strong theoretical base on original point of view on the solid state surface. Self-made devices for this were inert gas flow type atmospheric pressure and glass and rubber materials. Only ten years later devices transform to vacuum and stainless steel chambers with ingenuous automation. In the beginning of 70-s ML-ALD technology had no role to play in electronics neither in SU not in other countries as the gate insulator has hundreds of angstroms. The main materials been discussed in 80-th and 90-th were III-V compounds and oxides grown in flow type reactors. In Leningrad science school flow type (travelling wave) reactors were in use till the mid of 90-s. Besides oxide materials in our laboratories II-VI compounds were synthesized. The chamber of rotation type with substrate laid on hot plate and two zones of precursors divided by quartz plates from inert purge gas zones. In the middle of 90-s we decided an issue by inverting substrate and made levitation type of a chamber. These permits us synthesized CdTe compound with record growth rate of about some microns in hour. In theory ML-ALD idea gives excellent opportunity in a growth of high quality layers with high growth rate.