A 6V to 42V High Voltage CMOS Bandgap Reference Robust to RF Interference for Automotive Applications

Direct power injection (DPI) tests measure the electromagnetic immunity of IC and its critical circuit components against conducted RF disturbances. This paper presents electromagnetic interference (EMI) robust 6V to 42V pre-regulator and bandgap reference circuit designed for an automotive LIN transceiver IC in AMS 0.35µm high-voltage CMOS process. Detailed analysis for the behavior of bandgap reference voltage in presence of RF injected noise is presented. This paper also elaborates the details of DPI simulation setup and parasitic models that are essential to predict failures in the design phase itself. Experimental results confirm the proposed design and optimization strategy based on coupling capacitors.