Phosphorus-Implanted Emitter Crystalline Silicon Solar Cell with AL-BSF

As-implanted local phosphorus profiles in a single texture are discussed, taking into account of the incident angle of ion beam into the pyramidal textured (111) surface. The impact of tilt and twist angle on the electrical characteristics of phosphorus-implanted homogeneous emitter silicon solar cells with aluminum back surface field, 156 × 156 mm
²
in size, are investigated. Conversion efficiency increases with increase of tilt angle within a range of 7° to 35°, or decrease of rotation angle within a range of 15° to 90°. Thus, tilt and twist are the key factors of as-implantation depth profile, resulting in the improvement of conversion efficiency. Based on scanning capacitance microscopy observation, two-dimensional carrier distribution in phosphorus-implanted emitter is discussed.