Annealing Behavior of Aluminum Implanted Germanium

Donor and acceptor impurities mainly focused on aluminum and phosphorus implanted Germanium has been characterized in terms of mainly diffusion behaviors and carrier activations. Among Group III elements, aluminum implanted sample shows shallower junction and lower sheet resistance. No diffusion occurs under annealing conditions performed in the experiment (up to RTA 700oC 30sec). The co-existence of acceptor and donor impurities influences the diffusion and activation behaviors of mutual impurities. Aluminum co-implanted with phosphorus compensates carrier concentration, and retards the phosphorus diffusion.