SPICE simulation and evaluation of a GaN-based synchronous full-bridge resonant converter

This paper presents a SPICE-based simulation for a full-bridge converter applying Gallium Nitride (GaN)-based switches. The evaluated converter is concerned to a resonant topology which achieves extra-high efficiency when using an LLC network. The studied GaN-based switch model considers resistances and capacitances which are equivalent to each terminal of the transistor. Otherwise, the current through the device is modeled by a voltage controlled current source. Furthermore, high-frequency parasitic inductances are included in the circuitry in order to achieve a suitable and relevant simulation, since these parameters are important to a proper modeling of the switch dynamic losses. A comparative analysis regarding silicon-based devices is carried out highlighting the GaN improved efficiency for this full-bridge topology.