Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes

A series of samples with a different InGaN/GaN shallower-quantum well (SQW) interlayer are grown, and their effects on optical properties of InGaN/GaN multi-quantum wells and optical confinement factor of laser diodes (LDs) are investigated. It is found that when an SQW interlayer is inserted below InGaN/GaN green multiquantum wells (GMQWs), the emission intensity of the GMQW active region increases. This is attributed to the reduction of quantum confined stark effect and the V-pit density due to the decreased strain in GMQWs. In addition, we also find that inserting an SQW interlayer theoretically results in a weak leakage of the optical mode for green LDs. Therefore, their performance will be improved.