Threshold voltage extraction techniques for device @ 16 nm technology node

Dependence of threshold voltage (V
TH
) of a device and its extraction techniques are studied in this paper. To exactly model the transition characteristics of device, value of V
TH
plays an important role. Accuracy in the assessment of V
TH
of a device also depends upon the extraction method utilized. Several estimation techniques are already reported in literature. However, these techniques fail to extract accurate V
TH
due to their negligence of short channel effects (SCEs) and non-idealities increasing with device scaling. This paper reports various V
TH
extraction technique considering effects of technology scaling and dependence of V
TH
on various design metrics and process parameters. Extraction techniques available in literature are compared and reported in this paper @ 16-nm technology node. This work analyzes the impact of scaling and process technologies parameter on V
TH
and its extraction techniques. Simulation results have been extensively verified using SPICE.