Numerical modeling and analysis of ultra thin film Cu(In, Ga)Se2 solar cell using SCAPS-1D

This paper exhibits a numerical analysis of ultra thin film Cu(In, Ga)Se
2
(CIGS) solar cell which has been performed by using SCAPS-1D simulator. In this paper, the performances of CIGS solar cell is observed by varying absorber layer, buffer layer and window layer thickness. Also the effect of temperature has been carried out. The aim of this work is optimization of CIGS solar cell thickness as well as the efficiency. Results represent that solar cell performances have enhanced with rise in thickness of CIGS absorber layer. Meanwhile opposite scenario is found with the rise in buffer layer and window layer thickness. The highest cell efficiency achieved is 22.67% with 0.7862 V open circuit voltage (V
oc
), 34.130 mA/cm
²
short circuit current density (J
sc
) and 84.49% Fill Factor (FF) on 2000 nm CIGS absorber layer.