Unified Compact Model for Nanowire Transistors Including Quantum Effects and Quasi-Ballistic Transport

We present a surface potential-based compact model for nanowire FETs, which considers 1-D electrostatics along with the effect of multiple energy subbands. The model is valid for any semiconductor material, cross-sectional geometry, and any channel length with transport regimes varying from drift-diffusive to quasi-ballistic. The model captures the phenomenon of quantum capacitance and the effect of temperature. We have validated it with numerical simulations and experimental data for Si, Ge, and InAs nanowires of different geometries. Circuit simulation has also been performed with the model. The physics-based model is accurate and can be used as a tool for analysis and prediction of the effects of geometry scaling, material dependence, and temperature variation on device and circuit characteristics. To the best of our knowledge, this is the first time a compact model for nanowire FETs is being presented, which includes multiple subbands along with geometry scaling while being valid for different degenerate and nondegenerate semiconductor materials.