Chemical solution deposition of Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/ thin film with PbTiO/sub 3/ seeding layers through alkoxide route

Ferroelectric relaxor Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/ (hereafter abbreviated as PMN) thin films were prepared by the chemical solution deposition from molecular-designed alkoxides precursor solutions with PbTiO/sub 3/ (hereafter abbreviated as PT) multi-seeding layers. Alkoxide-derived PT seeding layer crystallized into a perovskite phase at low-temperatures above 450/spl deg/C which offers the in-situ nucleation sites for PMN. In this study, crystallization behavior was controlled by using the seeding process and by changing the annealing process and the stacking structures of precursor thin films. As a result, multilayer perovskite PMN thin films with seeding layers of PT could be successfully prepared at 800/spl deg/C (multi-seeding process). Relative permittivity of the resultant film was in the range from 1000 to 3500 at room temperature, depending upon the film thickness, annealing process and the stacking structures of multilayer thin films. The Curie temperatures of the resultant films also changed by the deposition process and the stacking structures of multilayer to form the compositional gradient.