Novel absorber membrane and thermocouple designs for CMOS-MEMS thermoelectric infrared sensor

This study designs and implements a thermoelectric IR sensor using TSMC 0.35μm 2P4M standard CMOS process. The novel design has three major concerns: heat conduction of the absorber membrane, distribution of the thermocouple, and etching release holes for post-CMOS process. Proposed design significantly increase the thermal resistance and responsivity of IR sensor. As compare with the reference design, the presented design could increase the responsivity for 6-fold at 25mtorr working pressure.