High-G (>20,000g) inertial shock survivability of epitaxially encapsulated silicon MEMS devices

In this work, we demonstrate both high-frequency (1.12 MHz) MEMS tuning fork resonators and lower frequency (39kHz) MEMS test devices capable of withstanding large magnitude inertial shocks. These devices reliably continue to function after the application of repeated inertial shocks in excess of 20,000g. The device performance, and the robust, pure silicon encapsulated environment are both preserved. Detailed before/after analysis and high-speed real time measurements confirm the functionality of the devices. High frequency, single anchored devices display no measureable change in properties, and even low frequency devices have high survival rates and only small changes in surface adhesion.