Shock-resistibility of inertial microswitch under reverse sensitive directional ultra-high G acceleration

The paper reports a novel inertial microswitch with multi-directional compact constraint structures for improving the shock-resistibility. Its shock-resistibility in the reverse sensitive directional ultra-high g acceleraiton (∼hunderds of thounsands) is simulated and analyzed. The dynamic response process indicates that in the designed inertial microswitch the proof mass weight G, the whole system stiffness k and the gap X2 between proof mass and reverse constraint blocks have significant effect on the shock-resistibility. The fabricated inertial microswitch by surface micromachining technology has been evaluated by the dropping hammer system. The test results show that the reverse resistant threshold acceleration athr increases with the decrease of the gap x2. The testing comparison of the microswitches with and without constraint structure indicates that the designed constraint structures can effectively improve the shock-resistibility.