A Comparative Study 4500-V Edge Termination Techniques for SiC Devices

This paper compares five edge termination techniques for SiC high-voltage devices: single zone junction termination extension (JTE), ring assisted-JTE (RA-JTE), multiple floating zone-JTE, hybrid-JTE, and floating field rings. PiN diodes with these edge terminations were fabricated on a 4.5kV-rated 4H-silicon carbide (4H-SiC) epi-layer. It was experimentally demonstrated that the Hybrid-JTE provides a nearly ideal breakdown voltage (~ 99% of the ideal parallel plane breakdown voltage) with a stable avalanche blocking behavior. RA-JTE, with tight control of the JTE implant dose, is demonstrated to be the most area-efficient edge termination structure for SiC power devices.