Simulation of the high frequency performances of a new type of SiGe HBT and fabrication

In this paper, a new type of SiGe HBT with modulation doped quantum well base structures has been presented for the first time. It is of both higher cut off frequency f/sub T/ and maximum oscillation frequency f/sub max/ than the current SiGe HBTs. Its high frequency performances have been analyzed and simulated from the physical model, including the influence of the following factors. They are (1) the carrier transport in the undoped quantum well, (2) the parasitic parameters of quantum well and barrier and (3) the carrier transport time from the emitter to collector, as the base width is several hundred angstroms. The results of simulation are in good agreement with those of experimental tests.