The resistance characteristics of the Ni-Cr thin films and their influence on the integrated circuits

Ni-Cr thin films with different thicknesses have been fabricated on the dielectric substrate silicon dioxide (SiO/sub 2/) by using magnetron sputtering and vacuum evaporation and annealed at different temperatures. The sheet resistance and the strip line microwave impedance of the Ni-Cr thin film are measured. The results show that they are influenced strongly by the thickness and the annealing temperature. These problems are analyzed in detail including the effects of the carrier tunnel transport, the oxidation, the condensation and the stabilization in the thin film.