Analytical study of high efficient Cu(In,Ga)Se2 solar cell with In2S3 buffer layer

This paper represents a lucid numerical analysis of thin film Cu(In,Ga)Se
2
(CIGS) solar cell with In
2
S
3
(Indium Sulphide) buffer layer by using SCAPS-1D. The effect of band gap, concentration and thickness of both Cu(In,Ga)Se
2
absorber layer and In
2
S
3
buffer layer are investigated in this simulation. This study is focused to analyze electrical performances of In
2
S
3
buffer layer based Cu(In,Ga)Se
2
solar cell for a better substitute of toxic CdS buffer layer. The optimum thickness has found 40 nm for In
2
S
3
buffer layer and 3000 nm for Cu(In,Ga)Se
2
absorber layer. In addition, the optimum band gap of CIGS and In
2
S
3
layer has attained 1.10 eV and 2.6 eV subsequently and 25.03% efficiency has achieved along with 0.75 V open circuit voltage (V
oc
), 39.435 mA/cm
²
short circuit current density (J
sc
) and 84.62% Fill Factor (FF).