Improved Envelope Load Pull system for high power transistors characterization

This paper deals with the implementation of an Envelope Load-Pull system suitable for GaN HEMT power transistors characterization. The novelty of the system, compared with previous Envelope Load-Pull systems lies in its capability to work with packaged transistors at 3.5GHz and a 15W output, scalable up to 20W. Furthermore, due to broadband components, the system presented is easily scalable up to 18GHz with simple component changes.