InxGa1−xAs/GaAs-based intermediate band solar cell: Effects of quantum dots

This paper describes the influence of In
_0.53
Ga
_0.47
As/GaAs quantum dots (QDs) in the intermediate band solar cell (IBSC). The In
_0.53
Ga
_0.49
As QDs have been inserted in the intrinsic region of a p-i-n GaAs solar cell in order to increase the absorption range as well as cell efficiency. The cell structure has been optimized with respect to the horizontal and vertical dot-to-dot spacing. The optimum efficiency is enhanced from 27.1% to 32.09% for increasing the number of QD layers.