Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at Vds = 0.3 V

We present a vertical nanowire InAs/GaAsSb/GaSb TFET with a highly scaled InAs diameter (20 nm). The device exhibits a minimum subthreshold swing of 48 mV/dec. for V
ds
= 0.1–0.5 V and achieves an I
on
= 10.6 μA/μm for I
off
= 1 nA/μm at V
ds
= 0.3 V. The lowest subthreshold swing achieved is 44 mV/dec. at V
ds
= 0.05 V. Furthermore, a benchmarking is performed against state-of-the-art TFETs and MOSFETs demonstrating a record high I60 and performance benefits for V
ds
between 0.1 and 0.3 V.