Experimental study on hole and electron effective masses in inversion layers of Ge (100), (110) and (111) p- and n-MOSFETs

The effective masses of hole and electron in the inversion layers have been quantitatively characterized for Ge p- and n-MOSFETs, for the first time, with Shubnikov-de Haas (SdH) oscillations measurements at ultra low temperatures. It was found that the effective mass clearly increased with a larger Ns for both hole and electron in (100)/(110)/(111) Ge p and n-MOSFETs. The effectiveness and necessity of considering the effective mass change with the inversion layer charge density have also been confirmed for Ge MOSFETs performance modeling and simulation.