First fully functionalized monolithic 3D+ IoT chip with 0.5 V light-electricity power management, 6.8 GHz wireless-communication VCO, and 4-layer vertical ReRAM

For the first time, we report low-cost heterogeneously integrated sub-40nm epi-like Si monolithic internet of thins (IoT) 3D
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-IC with wireless communication, light-electricity power management and vertical ReRAM (VRRAM) modules. High current driving multi-channel 3D
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UTB-MOSFETs (600μA/282μA@VG= ± 1V for 10-channel P/N FETs) was fabricated by low thermal budget super-CMP-planarized visible laser-crystallized epi-like Si channel and CO
₂
far-infrared laser annealing (CO
₂
-FIR-LA) activation technologies that support a 6.8GHz high frequency VCO circuits, 0.5V low-voltage power management circuit and drives 20nm 4-layer VRRAM (Set/Reset <;1.2V/1.8V, 3-bits/cell). This unique TSV-free monolithic 3D
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IC process provides the superiority in 3D hetero-integration; we successfully integrate these circuits in a low cost, small footprint, fully functionalized 3D
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IoT chip.