Dynamic behavior of a medium-voltage N-channel SiC-IGBT with ultra-fast switching performance of 300 kV/as

N-channel Silicon Carbide Insulated Gate Bipolar Transistor (SiC-IGBT) with reverse blocking voltage of 16 kV was developed on 4H-SiC carbon face. The double-pulse test with an inductive load has been conducted to investigate dynamic behavior with DC-bus voltage of 5 kV. It is found that a separation of current-path for the gate driving circuit and the main circuit is essential to secure stable operation. The newly developed power module with isolated gate driving circuit from the main circuit, ultra-fast switching speed of 303 kV/as is successfully accomplished. Moreover, extremely low switching loss of 3mJ for turn-on and 3.6 mJ for turn-off, respectively are measured. Thus, the superiority of fastening the switching speed in reduction of switching loss was experimentally confirmed.