A W-band MMIC Resistive Mixer Based on Epitaxial Graphene FET

This letter presents the design, fabrication and characterization of the first graphene based monolithic microwave integrated circuit (MMIC) in microstrip technology operating in W-band. The circuit is a resistive mixer in a 250 nm graphene field effect transistor (G-FET) technology on a SiC substrate. A conversion loss of 18 dB is achieved which is limited by the available local oscillator (LO) power. The mixer exhibits a flat response over radio frequency (RF) range of 90-100 GHz. The RF bandwidth is also limited by the measurement setup.